Amerika iteza imbere ibikoresho bya semiconductor hamwe nubuhanga buhanitse kugirango uhagarike chip.
Hamwe no kwiyongera kwumubare wa transistoriste muri chip, imikorere ya mudasobwa ya mudasobwa ikomeje gutera imbere, ariko densification yo hejuru nayo itanga ahantu henshi hashyushye.
Hatabayeho uburyo bukwiye bwo gucunga neza ubushyuhe, usibye kugabanya umuvuduko wibikorwa bya nyirarureshwa no kugabanya ubwizerwe, hari nimpamvu zituma Irinda ubushyuhe bukabije kandi bisaba ingufu zinyongera, bigatera ibibazo bidafite ingufu. Kugira ngo iki kibazo gikemuke, kaminuza ya Californiya, Los Angeles yateguye ibikoresho bishya bya semiconductor hamwe n’ubushyuhe bukabije bw’umuriro mu mwaka wa 2018, bigizwe na boron arsenide itagira inenge na fosifide ya boron, bisa n’ibikoresho bisanzwe byo gukwirakwiza ubushyuhe nka diyama na silicon karbide. igipimo, hamwe ninshuro zirenga 3 ubushyuhe bwumuriro.
Muri Kamena 2021, kaminuza ya Californiya, Los Angeles, yakoresheje ibikoresho bishya bya semiconductor kugirango ihuze hamwe na chip ya mudasobwa ifite ingufu nyinshi kugirango ihagarike neza ubushyuhe bwa chip, bityo bitezimbere imikorere ya mudasobwa. Itsinda ry’ubushakashatsi ryinjije semiconductor ya boron arsenide hagati ya chip na sink nkubushyuhe bwo guhuza ubushyuhe hamwe na chip kugirango bongere imbaraga zo gukwirakwiza ubushyuhe, banakora ubushakashatsi kubikorwa byo gucunga ubushyuhe bwibikoresho nyirizina.
Nyuma yo guhuza substrate ya boron arsenide nu ntera nini yingufu za gallium nitride semiconductor, hemejwe ko imiyoboro yumuriro wa gallium nitride / boron arsenide ya interineti yari hejuru ya MW 250 / m2K, kandi intera irwanya ubushyuhe bwageze ku rwego ruto cyane. Boron arsenide substrate yongeye guhuzwa hamwe na chip yo hejuru ya elegitoronike yimbere ya transistor igizwe na nitride ya aluminium gallium / gallium, kandi hemezwa ko ingaruka zo gukwirakwiza ubushyuhe ari nziza cyane ugereranije na karubide ya diyama cyangwa silikoni.
Itsinda ry’ubushakashatsi ryakoraga chip ku bushobozi ntarengwa, kandi bapima ahantu hashyushye kuva ubushyuhe bw’icyumba kugeza ku bushyuhe bwo hejuru. Ibyavuye mu bushakashatsi byerekana ko ubushyuhe bw’ubushyuhe bwa diyama ari 137 ° C, icyuma gishyuha cya silicon karbide ni 167 ° C, naho ubushyuhe bwa boron arsenide ni 87 ° C. Ubushuhe buhebuje bwumuriro wiyi interface buva muburyo budasanzwe bwa fononic band imiterere ya boron arsenide no guhuza intera. Ibikoresho bya boron arsenide ntabwo bifite gusa ubushyuhe bwo hejuru bwumuriro, ariko kandi bifite intera ntoya irwanya ubushyuhe.
Irashobora gukoreshwa nkubushyuhe kugirango igere kubikoresho byo hejuru bikora. Biteganijwe ko izakoreshwa mu ntera ndende, itumanaho ridafite imbaraga mu gihe kiri imbere. Irashobora gukoreshwa murwego rwumuvuduko mwinshi wa electronics cyangwa ibikoresho bya elegitoroniki.
Igihe cyo kohereza: Kanama-08-2022